Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal
- 28 October 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (18) , 2737-2739
- https://doi.org/10.1063/1.117695
Abstract
On Si‐implanted n‐type GaN, a nonalloyed Ti/Al metallization has been found to form an Ohmic contact that has a specific contact resistance as low as 1.0×10−5 Ω cm2. The Ohmic character is believed to be caused by the 1120 °C implant activation anneal which generates nitrogen vacancies that leave the surface heavily n type. This theory is indirectly confirmed on unimplanted n‐type GaN by comparing the rc of nonalloyed Ti/Al on unannealed GaN with that of nonalloyed Ti/Al on 1120 °C annealed GaN. The former has rectifying electrical characteristics, while the latter forms an Ohmic contact with an rc=1.3×10−3 Ω cm2.Keywords
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