Temperature dependence of planar channeling radiation
- 1 January 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (1) , 13-17
- https://doi.org/10.1103/physrevb.35.13
Abstract
Peak energies and linewidths of 54-MeV electron planar channeling radiation from a silicon crystal have been measured as a function of temperature. Our measured peak energies are compared with our theoretical calculations to obtain a Debye temperature for silicon of 495±10 K. This value is appreciably lower than the value of 543 K obtained from an x-ray diffraction measurement, but is in excellent agreement with the value of 500 K obtained recently from a measurement of axial channeling radiation.Keywords
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