Reduction of dislocation density in Si by thermal cyclic annealing
- 16 September 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 97 (1) , 57-63
- https://doi.org/10.1002/pssa.2210970103
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Temperature dependence of friction force acting on dislocations in silicon crystalsJournal of Materials Science, 1984
- Dislocation Generation at Si3 N 4 Film Edges on Silicon Substrates and Viscoelastic Behavior of SiO2 FilmsJournal of the Electrochemical Society, 1979
- Dynamic Behavior of Dislocations in Silver and Silver Base Dilute Alloy Single CrystalsTransactions of the Japan Institute of Metals, 1976
- Production of highly perfect copper crystals with thermal cyclic annealingJournal of Crystal Growth, 1974
- The Effects of Thermal Cyclic Annealing in Copper Single CrystalsTransactions of the Japan Institute of Metals, 1970
- Effect of Thermal Cyclic Annealing on the Decrement of Dislocation Density in Copper Single CrystalsJournal of the Japan Institute of Metals and Materials, 1968