Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes
- 1 February 1998
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 264-268, 929-932
- https://doi.org/10.4028/www.scientific.net/msf.264-268.929
Abstract
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