Twin free growth of II–VI compounds on (111) CdZnTe substrates by molecular beam epitaxy
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 552-556
- https://doi.org/10.1016/0022-0248(89)90464-8
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Molecular‐beam epitaxy of CdxHg1−xTe at D.LETI/LIRJournal of Vacuum Science & Technology A, 1988
- Polarity determination of CdTe crystals by electron diffractionJournal of Applied Physics, 1988
- Polarity determination in compound semiconductors by channeling: Application to heteroepitaxyApplied Physics Letters, 1988
- A comparison of the structure of CdTe and (Hg, Cd)Te layers grown by MOVPE on {111}A and {111}B CdTe substratesJournal of Crystal Growth, 1988
- MBE p-type Hg1-xCdxTe grown on the (110) orientationJournal of Crystal Growth, 1988
- (100) versus (111)B crystallographic orientation of Hg1−xCdxTe grown by molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1987
- X-ray observation of twin faults in (1,1,1) CdTe epitaxial layers and in (1,1,1) Hg1−x X xTe/CdTe superlatticesApplied Physics Letters, 1986
- Relation between crystallographic orientation and the condensation coefficients of Hg, Cd, and Te during molecular-beam-epitaxial growth of Hg1−xCdxTe and CdTeJournal of Applied Physics, 1986
- Crystal growth of Cd1−xZnxTe and its use as a superior substrate for LPE growth of Hg0.8Cd0.2TeJournal of Vacuum Science & Technology A, 1985
- Molecular beam epitaxial growth of high quality HgTe and Hg1−xCdxTe onto GaAs(001) substratesApplied Physics Letters, 1984