Summary Abstract: Growth of device-quality GaAs and (Al,Ga)As on (211)-oriented silicon substrates, with thin (0.1 μm) superlattice buffer layers
- 1 March 1986
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 4 (2) , 641
- https://doi.org/10.1116/1.583584