Characteristics Of SiO 2 Films Deposited By Ionized Nozzle-Beam Technique
- 9 April 1985
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 0530, 84-88
- https://doi.org/10.1117/12.946471
Abstract
SiO2 films have been deposited on Si wafers at a substrate temperature of 300°C and a pressure of 10-2 Pa using the Ionized Nozzle-Beam Deposition (INBD) technique. SiO grains were used as the deposition material. The refractive index and infrared absorption spec-trum of the deposited SiO 0 films resembled to those of the SiO2 films deposited using SiO2 as the source material. We found that the film quality was improved significantly after a short time furnace annealing (800°C, 10 minutes).Keywords
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