Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films
- 31 May 2001
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 178 (1-4) , 74-77
- https://doi.org/10.1016/s0168-583x(01)00495-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Structure Formation Phenomena During Phase Inversion. II. Semiflexible Polymers and Liquid CrystallinityJournal of Macromolecular Science, Part B, 2000
- The formation of narrow nanocluster bands in Ge-implanted SiO2-layersSolid-State Electronics, 1999
- Formation of 2-D Arrays of Silicon Nanocrystals in Thin SiO[sub 2] Films by Very-Low Energy Si[sup +] Ion ImplantationElectrochemical and Solid-State Letters, 1999