Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
- 15 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 433-436, 725-730
- https://doi.org/10.4028/www.scientific.net/msf.433-436.725
Abstract
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