Growth of epitaxial layers of silicon by sublimation through thin alloy zones

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Abstract
The vapour-liquid-solid mechanism of crystal growth is used to obtain epitaxial silicon layers at low temperatures. The layers are grown by a sublimation technique, the silicon being deposited on to a single crystal silicon substrate via a thin liquid alloy zone of Au-Si. Epitaxial silicon layers, up to 15 μm thick and free from stacking faults, are grown at temperatures as low as 500 ± 25°C. Epitaxial growth is also obtained under Cu-Si, In-Si or Sn-Si alloy zones and has stacking fault densities in the range 5 × 103 cm-2 to 107 cm-2. The minimum temperature at which epitaxial growth is observed is at 300°C using an In-Si alloy. The advantages and disadvantages of applying the vapour-liquid-solid mechanism to the growth of epitaxial layers are discussed, particularly the problem of incorporation of the alloy in the growing layer.