Stochastic geometry effects in MOS transistor
- 1 August 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 20 (4) , 865-870
- https://doi.org/10.1109/jssc.1985.1052401
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A comment on "Modeling of MOS transistors with nonrectangular gate geometries"IEEE Transactions on Electron Devices, 1983
- Random errors in MOS capacitorsIEEE Journal of Solid-State Circuits, 1982
- Modeling of MOS transistors with nonrectangular-gate geometriesIEEE Transactions on Electron Devices, 1982
- Theory of the carrier-density fluctuations in an IGFET near thresholdJournal of Applied Physics, 1975
- Characteristics of the metal-Oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1964