Preparation of TiN Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12S) , 3558
- https://doi.org/10.1143/jjap.30.3558
Abstract
TiN film is used in the ultra large scale integrated circuit (ULSI) process as a diffusion barrier. Conventional TiN films are deposited by reactive sputtering or by rapid thermal nitridation (RTN) of sputtered titanium layers. Our research group has developed a new ECR (electron cyclotron resonance) plasma CVD (chemical vapor deposition) system capable of depositing metal films. By using this system, TiN films were prepared using TiCl4 and N2 as material gases. It is proven that the films have many advantages: low resistivity, low stress, high barrier property, thick deposition on the bottom of the high aspect ratio's hole and low chlorine concentration in comparison with LPCVD (low pressure chemical vapor deposition) TiN film.Keywords
This publication has 6 references indexed in Scilit:
- Kinetical Aspects of the LPCVD of Titanium Nitride from Titanium Tetrachloride and AmmoniaJournal of the Electrochemical Society, 1991
- LPCVD Titanium Nitride for ULSIsJournal of the Electrochemical Society, 1991
- LPCVD TiN as Barrier Layer in VLSIJournal of the Electrochemical Society, 1989
- SiO2 planarization technology with biasing and electron cyclotron resonance plasma deposition for submicron interconnectionsJournal of Vacuum Science & Technology B, 1986
- Chemical vapor deposition of titanium nitride at low temperaturesThin Solid Films, 1986
- Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1983