We report an entirely new pattern-replication technique for IC fabrication. It has demonstrated submicrometer (<0.5 μm) resolution and it has the capability of large throughput (wafer-levels/h). It utilizes high-energy protons as the exposing radiation through a mask placed in proximity to a wafer covered with resist. We call this new technique ’’ion-beam lithography’’ (IBL). System parameters and measurements relevant to the use of IBL as a production technology are discussed and SEM micrographs of submicrometer patterns in PMMA are presented. The technique is similar to x-ray lithography, in that a pattern is produced in a thin resist film after exposing it to radiation through a mask. High-energy protons have the same advantage as x rays in eliminating wavelength diffraction problems which limit the resolution of photolithography. Also, a gap (∠15–25 μm) is permitted between the mask and wafer. Ions have an advantage over x rays in that penumbral distortion is avoided by using highly collimated ion beams which are available with present state of the art; ions are collimated using conventional ion-optical techniques, whereas use of a distant ’’point’’ source is the only feasible scheme for collimation of x rays.