Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100)–2×1–H Surface
- 1 March 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (3B) , L361
- https://doi.org/10.1143/jjap.36.l361
Abstract
Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)–2×1–H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.Keywords
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