The growth and some properties of GaxIn1−xSb
- 1 December 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 11 (3) , 341-344
- https://doi.org/10.1016/0022-0248(71)90106-0
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Three-level oscillator: a new form of transferred-electron deviceElectronics Letters, 1970
- The gunn effect and conduction band structure in GaxIn1−xSb alloysSolid State Communications, 1969
- Growth properties of GaSb: The structure of the residual acceptor centresJournal of Physics and Chemistry of Solids, 1967
- GaSb Prepared from Nonstoichiometric MeltsJournal of the Electrochemical Society, 1966