(AlGa)As strip buried-heterostructure lasers prepared by hybrid crystal growth
- 13 May 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (10) , 397-398
- https://doi.org/10.1049/el:19820271
Abstract
The localised nonwetting problem encountered during regrowth by LPE in the fabrication of a strip buried-heterostructure (SBH) laser was solved by using the hybrid process of MBE to grow the uniform four-layer heterostructure and LPE to achieve the melt back and regrowth. As a result of this process, a very significant improvement in the device yield was obtained.Keywords
This publication has 1 reference indexed in Scilit:
- Phase equilibria in ternary III–V systemsProgress in Solid State Chemistry, 1972