Variable Angle of Incidence Spectroscopic Ellipsometric Study of Semiconductor Multilayer Structures
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study for a GaAs-AlxGa1-xAs-GaAs structure shows that maximum sensitivity to layer thicknesses and ternary composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two MBE-grown samples. Moderately high doping levels in the ternary layers are also found to strongly affect the data at photon energies below the ternary bandgap. Null ellipsometry measurements at only two wavelengths are sufficient to determine layer thicknesses.Keywords
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