Impurity states in Mott insulators
- 1 January 1974
- journal article
- Published by EDP Sciences in Journal de Physique et le Radium
- Vol. 35 (2) , 171-188
- https://doi.org/10.1051/jphys:01974003502017100
Abstract
The effect of a point scattering potential on the properties of a nearly half filled narrow energy-band is studied in the limit of strong intra-atomic Coulomb repulsions. The potential needed to localize a state depends on the spin configuration. A localized hole is found to stabilize a ferromagnetic polarization within a few atomic distances from the impurity. The strength of this coupling, which decreases as an inverse power of the bound state energy and exponentially with distance, is evaluated. The effect of a magnetic field on the bound state energy is studied. A large negative magnetoresistance is predicted, and a metal-insulator transition is shown to be possible for a certain range of impurity potentials, and impurity concentrations. The experimental situation in NiO and Li doped NiO is discussedKeywords
This publication has 24 references indexed in Scilit:
- Dielectric Constant of an Exchange-Polarized Electron Gas and the Metal-Semiconductor Transition in Doped EuOPhysical Review Letters, 1972
- General Theorems on Ferromagnetism and Ferromagnetic Spin WavesPhysical Review B, 1972
- Exchange-Induced Autoionization in Eu-Rich EuOPhysical Review Letters, 1971
- Anderson's theory of localized statesJournal of Physics C: Solid State Physics, 1970
- Pressure Dependence of the Electrical Resistivity of EuOPhysical Review Letters, 1970
- Electronic transport phenomena in single-crystal NiO and CoOProceedings of the Physical Society, 1967
- Ferromagnetism in a Narrow, Almost Half-FilledBandPhysical Review B, 1966
- Mechanism of the Electrical Conduction in Li-Doped NiOPhysical Review B, 1966
- Electrical Properties of and Containing TitaniumPhysical Review B, 1951
- Cation arrangement in a few oxides with crystal structures of the spinel typeRecueil des Travaux Chimiques des Pays-Bas, 1936