Auger Electron Ejection from Germanium and Silicon by Noble Gas Ions

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Abstract
Experimental results concerning electron ejection from annealed, atomically clean surfaces of germanium and silicon by the singly charged ions of the noble gases are reported. The (111) and (100) faces of silicon and the (111) face of germanium have been studied. Total yield and kinetic energy distribution of ejected electrons were measured and ion energies varied in the range 10 to 1000 ev. A new method of operation of the apparatus and of obtaining the kinetic energy distributions from the recorded retarding potential data has been employed. Documentation of the state of the target surfaces is given including photomicrographs and electron micrographs of the silicon surfaces. Since these experimental results are subsequently to be interpreted theoretically, identification of the results with the theoretical ideas only is given here.