Local-Field Effects in the Plasmon Line Shape of Semiconductors of the Diamond and Zinc-Blende Structures

A systematic quantitative study of local-field effects in the plasmon line shape of semiconductors of the diamond (Si, Ge) and zinc-blende (GaP, GaAs, GaSb, InAs, InSb) structures is presented and is contrasted with the behavior in Al and In. Because $\frac{V_G}{\hslash {\omega }_p}\ll 1$, the effects of the periodic potential on the dielectric properties can be accounted for by a perturbation expansion to second order in $\frac{V_G}{\hslash \omega }$. We find quantitative agreement with electron-energy-loss experiments when local-field corrections are included.