Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs
- 22 March 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (12) , 1417-1419
- https://doi.org/10.1063/1.108697
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substratesJournal of Applied Physics, 1992
- Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth areaJournal of Applied Physics, 1989
- Evidence for the electron traps at dislocations in GaAs crystalsJournal of Applied Physics, 1989
- Influence of lattice misfit on heterojunction bipolar transistors with lattice-mismatched InGaAs basesJournal of Applied Physics, 1988
- Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposureApplied Physics Letters, 1986
- Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In dopingApplied Physics Letters, 1986
- Donor neutralization in GaAs(Si) by atomic hydrogenApplied Physics Letters, 1985
- Hydrogen plasma etching of GaAs oxideApplied Physics Letters, 1981
- Nonradiative recombination at dislocations in III–V compound semiconductorsJournal of Microscopy, 1980