Self-Compensation in Manganese-Doped Ferromagnetic Semiconductors
- 6 November 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 89 (22) , 227201
- https://doi.org/10.1103/physrevlett.89.227201
Abstract
We present a theory of interstitial Mn in Mn-doped ferromagnetic semiconductors. Using density-functional theory, we show that under the nonequilibrium conditions of growth, interstitial Mn is easily formed near the surface by a simple low-energy adsorption pathway. In GaAs, isolated interstitial Mn is an electron donor, each compensating two substitutional Mn acceptors. Within an impurity-band model, partial compensation promotes ferromagnetic order below the metal-insulator transition, with the highest Curie temperature occurring for 0.5 holes per substitutional Mn.Keywords
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