Molecular Beam Epitaxial Growth of ZnTe and ZnSe

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Abstract
The electrical and optical properties of and prepared by molecular beam epitaxy have been studied. Epitaxial growth was found to take place at ≳ 250°C for on and and at ≳ 300°C for on ; the epitaxial growth ceased at for and at for because of the reevaporation of compound and/or impinging molecules. The observed growth rate dependence on substrate temperature and on impinging rate ratio has been explained on the basis of a model in which the number of incorporated and reevaporated molecules are strongly coverage dependent. on , and on and had good mirror smooth surfaces. on and , however, had a rather rough surface. Ga was found to diffuse, due to a large number of misfit defects at interface, from the substrate into influencing the electrical and optical properties of grown layers considerably. The resistivities of undoped layers were ∼5 Ω‐cm for on and ∼104 Ω‐cm for on . Sb was used to increase the hole concentration of on up to ∼1018cm−3. The resistivities of on were found to decrease to ∼0.07 Ω‐cm by Ga doping. The results of photoluminescence measurement suggest that the higher substrate temperature makes the better quality layers.

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