Ultra low power SiGe:C HBT for 0.18 μm RF-BiCMOS

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.2003.1269181

Abstract

A SiGe:C HBT in 0.18 /spl mu/m BiCMOS is developed for ultra low power applications based on a unique optimization solution, including a dedicated PIN e/b design combined with a two-step Ge profile and a two-step SIC. State-of-the-art performance is achieved with respect to benchmarked low power devices.

Keywords

HETEROJUNCTION BIPOLAR TRANSISTORS
BORON
CURRENT DENSITY
CAPACITANCE
DELAY EFFECTS
APPLICATION SPECIFIC PROCESSORS
DOPING PROFILES
DENSITY MEASUREMENT
CURRENT MEASUREMENT
POWER MEASUREMENT

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