Endurance of MOSFETs with rapid thermally reoxidized nitrided thin gate oxides to hot carrier-induced GIDL
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (12) , 2711-2712
- https://doi.org/10.1109/16.158740
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Channel hot-carrier stressing of reoxidized nitrided silicon dioxideIEEE Transactions on Electron Devices, 1990
- Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processingIEEE Transactions on Electron Devices, 1989