A new technique of thermal RMS measurement
- 1 December 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 9 (6) , 374-380
- https://doi.org/10.1109/JSSC.1974.1050530
Abstract
A thermal technique of rms measurement is described which uses the base-emitter junction of a bipolar transistor to sense the temperature change of a monolithic chip due to the power dissipation of a companion diffused resistor. An analysis is presented which provides: 1) design equations for performing error compensation to minimize the nonlinearity of the rms-to-dc conversion, and 2) ac feedback network design to optimize the low frequency cutoff and settling time product. Resulting rms converters had midband accuracies of /spl plusmn/0.05 percent of full scale over a dynamic range of 30 dB, high frequency limits of 100 MHz for 2 percent accuracy, and settling times less than 1 s.Keywords
This publication has 2 references indexed in Scilit:
- Analysis of Electrothermal Integrated CircuitsIEEE Journal of Solid-State Circuits, 1971
- A New Wideband True Rms-to-Dc ConverterIEEE Transactions on Instrumentation and Measurement, 1967