Relaxed Si0.7Ge0.3 buffer layers for high-mobility devices
- 16 October 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (16) , 2373-2375
- https://doi.org/10.1063/1.114349
Abstract
The minimum epitaxial layer thickness required to produce relaxed, thermally stable, Si0.7Ge0.3 buffer layer structures for high electron‐ and hole‐mobility devices has been determined, using high resolution x‐ray diffraction. A 1.4‐μm‐thick layer, step graded to x=0.35, is sufficiently thick so that the residual strain in a uniform composition Si0.33Ge0.67 layer grown on top of it is essentially independent of thickness or growth temperature of the layer. Such structures are stable when annealed at 750 °C.Keywords
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