Interfacet mass transport and facet evolution in selective epitaxial growth of Si by gas source molecular beam epitaxy
- 1 May 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (3) , 2381-2386
- https://doi.org/10.1116/1.588866
Abstract
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