Relative influence of relaxation times on the frequency behaviour of GaAs
- 16 January 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 1 (1) , 29-36
- https://doi.org/10.1002/pssa.19700010103
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Comments on "A limitation on frequency of Gunn effect due to the intervalley scattering time"Proceedings of the IEEE, 1969
- Theoretical efficiency of the l.s.a. mode for gallium arsenide at frequencies above 10GHzElectronics Letters, 1968
- HOT ELECTRON RELAXATION TIMES IN TWO-VALLEY SEMICONDUCTORS AND THEIR EFFECT ON BULK-MICROWAVE OSCILLATORSApplied Physics Letters, 1967
- MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDEApplied Physics Letters, 1967
- A limitation on frequency of Gunn effect due to the intervalley scattering timeProceedings of the IEEE, 1967
- Calculation of the velocity-field characteristic for gallium arsenidePhysics Letters, 1966
- High-field distribution function in GaAsIEEE Transactions on Electron Devices, 1966