Dependence on quantum confinement of the in-plane effective mass inGa0.47In0.53As/InP quantum wells

Experimental data obtained on undoped, ${\mathrm{Ga}}_{0.47}$ ${\mathrm{In}}_{0.53}$As/InP, single quantum wells using the far-infrared, optically-detected cyclotron resonance technique show a strong increase of the in-plane effective mass of electrons with increasing quantum confinement. The experimental results are compared with a model calculation in which conduction-band nonparabolicity and wave-function penetration into the barrier material have been taken into account. The roughness of the surface between the quantum well and the barrier material is proposed to be the reason for the decrease in electron scattering time from 1.1 ps (1000 Å) to 120 fs (80 Å).