Self-aligned npn bipolar transistors

• 1 January 1980
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 823-824
• https://doi.org/10.1109/iedm.1980.189964

Abstract

Keywords

• BIPOLAR TRANSISTORS
• ISOLATION TECHNOLOGY
• DOPING PROFILES
• RING OSCILLATORS
• IMPEDANCE
• ION IMPLANTATION
• DELAY
• PARASITIC CAPACITANCE
• SWITCHING CIRCUITS
• DEGRADATION