Direct evidence for diffusion and electromigration of Cu in CuInSe2
- 1 November 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (9) , 4282-4285
- https://doi.org/10.1063/1.366252
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Dopant accumulation during substitutional–interstitial diffusion in semiconductorsApplied Physics Letters, 1997
- Junction sharpness in field-induced transistor structures in CuxAg1−xInSe2Journal of Applied Physics, 1996
- Ion migration in chalcopyrite semiconductorsThe Journal of Physical Chemistry, 1992
- Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe 2 CrystalsScience, 1992
- Improvements in the optical quality of AgGaSe2 crystalsMaterials Research Bulletin, 1990
- Chemical diffusion coefficients and stability of CuInS2 and CuInSe2 from polarization measurements with point electrodesSolid State Ionics, 1988
- Ionic mobility and electronic junction movement in CuInSe2Solid State Ionics, 1988
- Structural and Solar Conversion Characteristics of the ( Cu2Se ) x ( In2Se3 ) 1 − x SystemJournal of the Electrochemical Society, 1985
- Ionic Conduction in Ternary ChalcogenidesJournal of the Electrochemical Society, 1977
- Zur Integration der Diffusionsgleichung bei variabeln DiffusionscoefficientenAnnalen der Physik, 1894