The Growth of Niobium on Perfect and Imperfect Sapphire

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Abstract
Niobium prepared by rf sputtering has been found to nucleate and grow differently on the basal plane of low dislocation density (chemical vapor deposited) and high dislocation density (Czochralski‐grown) sapphire wafers. The low dislocation showed three different orientations related to each other by a threefold axis: and , while those films grown on more imperfect, high dislocation substrates, generally showed only one orientation: .

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