Conduction in illuminated GaAs/AlxGa1−xAs heterostructures. I. Experiment
- 15 March 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (6) , 2244-2249
- https://doi.org/10.1063/1.338946
Abstract
We have measured the Hall carrier concentration nH(T) and the Hall mobility μH(T) for some n‐type, Si‐doped GaAs/AlxGa1−xAs heterostructures (x=0.2 and 0.3) in the range 4.2–320 K for different levels of continuous illumination by a red light emitting diode. We interpret these data with the model of the interface carrier density described in the following paper [W. R. McKinnon and C. M. Hurd, J. Appl. Phys. 6 1, 2250 (1987)], which explains qualitatively the gross features in the temperature dependencies. The interpretation shows the effects of both deep and shallow donors, and of the magnetic field dependence arising from parallel conduction.This publication has 19 references indexed in Scilit:
- Conduction in illuminated GaAs/AlxGa1−xAs heterostructures. II. CalculationJournal of Applied Physics, 1987
- Deep donor model for the persistent photoconductivity effectApplied Physics Letters, 1986
- Parallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctionsJournal of Physics C: Solid State Physics, 1985
- Shallow and deep donors in direct-gap -type grown by molecular-beam epitaxyPhysical Review B, 1984
- Comprehensive analysis of Si-doped (): Theory and experimentsPhysical Review B, 1984
- Temperature dependence of the electron mobility in GaAs-GaAlAs heterostructuresApplied Physics Letters, 1984
- Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistorsApplied Physics A, 1984
- Electron density of the two-dimensional electron gas in modulation doped layersJournal of Applied Physics, 1983
- Photoconductivity storage in Ga1−xAlxAs alloys at low temperaturesSolid-State Electronics, 1982
- Long-lifetime photoconductivity effect in n-type GaAlAsApplied Physics Letters, 1977