Improvements in MBE Grown AlxGa1-xAs/GaAs Single Quantum Well Structures Resulting from Dimeric Arsenic
- 1 February 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (2A) , L126
- https://doi.org/10.1143/jjap.23.l126
Abstract
The effect of arsenic species on the photoluminescent response of GaAs/Al x Ga1-x As single quantum well structures grown by molecular beam epitaxy was studied. At high substrate temperatures, e.g. 700°C, the luminescent properties were not highly sensitive to the arsenic species (dimeric or tetrameric) used. At lower substrate temperatures, however, the As species had a significant influence on the response. With a substrate temperature of 620°C, the intensity of the photoluminescence peak due to the quantum well increased by a factor of 2.5 in going from As4 to As2, primarily as a result of an improved inverted heterointerface. One proposed mechanism of improvement, the more effective cracking of arsenic at high substrate temperatures, is supported by these results.Keywords
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