Adsorption geometry and saturation coverage of Na on the Si(100)-(2×1) surface: First-principles calculations
- 15 October 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (15) , 8210-8213
- https://doi.org/10.1103/physrevb.44.8210
Abstract
We have performed first-principles total-energy calculations for Na on the Si(100)-(2×1) surface at different coverages. At half-monolayer Na coverage [one Na atom per Si(100)-(2×1) unit cell], the most favorable adsorption site of Na is found to be the valley bridge site. At one-monolayer Na coverage [two Na atoms per Si(100)-(2×1) unit cell], the Na atoms occupy both the valley bridge sites and the pedestal sites. The one-monolayer-coverage models have substantially lower surface energies than the half-monolayer-coverage models, indicating that the saturation coverage should be one monolayer. We also found that the surface is metallic at half-monolayer Na coverage and semiconducting at one-monolayer coverage.Keywords
This publication has 14 references indexed in Scilit:
- Adsorption geometry of (2×1) Na on Si(001)Physical Review B, 1990
- Atomic structure of alkali metal overlayers on the Si(001) surfaceJournal of Vacuum Science & Technology A, 1990
- Chemisorption bonding, site preference, and chain formation at the K/Si(001)2×1interfacePhysical Review B, 1989
- Properties of potassium adsorbed on Si(100)2×1Journal of Vacuum Science & Technology A, 1989
- Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs(110) and K/GaAs(110) interfacesPhysical Review B, 1988
- Photoelectron diffraction study of Si(001) 2 × 1-K surface: Existence of a potassium double layerPhysical Review B, 1988
- Angle-resolved photoelectron-spectroscopy study of the Si(001)2×1-K surfacePhysical Review B, 1987
- Novel electronic properties of a potassium overlayer on Si(001)-(2×1)Physical Review Letters, 1986
- Theory of the overlayer plasmon on the Si(001)2×1-K surfacePhysical Review B, 1985
- Structural and electronic model of negative electron affinity on the Si/Cs/O surfaceSurface Science, 1973