Si avalanche photodetectors fabricated in standard complementary metal-oxide-semiconductor process

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Abstract
The authors report siliconavalanchephotodetectors (APDs) fabricated with 0.18 μ m standard complementary metal-oxide-semiconductor(CMOS) process without any process modification or a special substrate. When the bias is above the avalanche breakdown voltage, CMOS-compatible APD (CMOS-APD) exhibits negative photoconductance in photocurrent-voltage relationship and rf peaking in the photodetection frequency response. The reflection coefficient measurement of CMOS-APD indicates that rf peaking is due to resonance caused by appearance of inductive components in avalanche region. The rf-peaking frequency increases with the increasing reverse bias voltage.