MIS and Schottky barrier microstrip devices
- 1 January 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 60 (11) , 1460-1461
- https://doi.org/10.1109/proc.1972.8937
Abstract
The properties of MIS (metal-insulator-semiconductor) or Schottky barrier microstrip transmission-line structures are shown to permit the realization of a wide variety of signal-processing devices including electronically variable delay lines and phase shifters, and parametric frequency converters and amplifiers.Keywords
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