On the climb of dislocations in boron-ion-implanted silicon
- 1 September 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (9) , 3747-3751
- https://doi.org/10.1063/1.324293
Abstract
The climb of dislocations, both perfect [b= (1/2) 〈100〉] and imperfect [b= (1/3) 〈111〉] was studied in boron‐implanted silicon thin foils by electron microscope observation of the shrinkage of interstitial‐type dislocation loops. The temperature dependence of the climb rate gave an apparent activation energy of 5.6±0.5 eV for both types. The imperfect loops adopted a rounded shape during shrinkage but tended to acquire straight segments whenever the climb motion required nucleation of new jog pairs. Climb rate at a given temperature was shown to be a function of the climb force on the dislocation and on the distance to the nearest efficient sink or source. The surfaces of the foil were shown to be relatively poor sinks for interstitials or alternatively poor sources for vacancies.This publication has 16 references indexed in Scilit:
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