Properties of High Heat-Resistance µc-SiCx:H Emitter Silicon HBT's
- 1 May 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (5A) , L754-756
- https://doi.org/10.1143/jjap.28.l754
Abstract
Properties of µc-SiC x :H prepared by plasma CVD are studied with emphasis on microcrystallite growth and thermal stability. A small percentage of carbon added to µc-Si:H effectively suppresses crystalline-grain growth which degrades the wide-bandgap effect. As a result, the µc-SiC x :H-emitter HBT yields higher current gains than the µc-Si:H-emitter HBT over the entire current range measured. Greater heat-resistance properties are also observed. Accordingly, a current gain as high as 450 is maintained even after 450°C annealing.Keywords
This publication has 1 reference indexed in Scilit:
- Boron Doping of Hydrogenated Silicon Thin FilmsJapanese Journal of Applied Physics, 1981