The Role of Low-Energy Ion/Surface Interactions During Crystal Growth From the Vapor Phase
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 50 references indexed in Scilit:
- Direct evidence for an order/disorder phase transition at x≂0.3 in single-crystal metastable (GaSb)(1−x)(Ge2)x alloys: High-resolution x-ray diffraction measurementsJournal of Applied Physics, 1986
- Properties of CeO_2 thin films prepared by oxygen-ion-assisted depositionApplied Optics, 1985
- Nonunique structure of metastable (GaSb( alloysPhysical Review Letters, 1985
- Modification of the optical and structural properties of dielectric ZrO2 films by ion-assisted depositionJournal of Applied Physics, 1984
- Mechanisms of reactive sputtering of titanium nitride and titanium carbide III: Influence of substrate bias on composition and structureThin Solid Films, 1983
- Raman scattering from crystalline and amorphous (GaSb)1-xGex semiconducting filmsSolid State Communications, 1983
- Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part ICritical Reviews in Solid State and Materials Sciences, 1983
- Ion–surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma-enhanced CVD: Applications to semiconductorsJournal of Vacuum Science and Technology, 1982
- Nucleation, growth and transformation of amorphous and crystalline solids condensing from the gas phaseAstrophysics and Space Science, 1979
- Columnar microstructure in vapor-deposited thin filmsThin Solid Films, 1977