Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth

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Abstract
A novel structure electroabsorption modulator/DFB laser integrated device is proposed and demonstrated. Both functional devices consist of MQW structures with different quantum energy levels, which are automatically formed in the same MOCVD run by using a selective area growth technique. A fundamental modulation with a 12.6dB extinction ratio is demonstrated.