Electrical Resistance-Strain Characteristics of Thin Evaporated Metal Films

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Abstract
The electrical resistance‐strain coefficients of thin evaporated films of aluminum, gold, cobalt, nickel, palladium, platinum, antimony, and tellurium have been measured. The coefficients (strain‐sensitivity coefficient or ``gauge‐factor'' γ) depend on the specific resistance Rs of the films. For relatively thick films (small Rs), γ tends to approach the bulk value γb; for relatively thin films (large Rs), γ may be many times greater than γb; for films of intermediate thickness γ has a minimum value. The resistance change was found to be proportional to strain for all the above films except those of Ni and Sb. Some possible mechanisms for the observed behavior are discussed; it is suggested that free‐path effects are predominant in films of intermediate thickness, and that the tunneling conduction mechanism plays an important role in producing the high strain sensitivity of very thin (high Rs) films of separated particles.

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