Morphology of GaAs and InP (001) Substrates after Different Preparation Procedures Prior to Epitaxial Growth

Publisher Website
Google Scholar
Abstract
The morphology of (001) and (001) substrates after different preparation procedures prior to epitaxy has been studied. The effect of two commonly used polishing solutions were tested: and . These solutions remove a certain amount of material, but we have shown in previous papers that a residual oxide layer remains on the surface, resulting from preparation in air, which must be removed prior to epitaxial growth. The morphology of the surfaces after the above mentioned etchants and additional wet chemical deoxidation treatments was characterized using a phase contrast microscope equipped with a Nomarski interferometer. A process is proposed for each material, which gives a high morphological quality to the final surfaces.

This publication has 0 references indexed in Scilit: