Cathodoluminescent Measurements in GaP (Zn, O)
- 1 June 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (7) , 2774-2776
- https://doi.org/10.1063/1.1660623
Abstract
Cathodoluminescent measurements have been made on red emitting Zn–O‐doped GaP. With a nonfocused beam, the minority carrier diffusion length Ln and the surface recombination velocity S have been obtained. For a particular illustrative sample, these values were found to be Ln=0.5±0.2 μm and S=5×105 cm/sec. The high generation rates achieved with a finely focused electron beam (∼0.5 μm) result in a near square‐root dependence of emission on excitation. This dependence requires that the nonradiative centers as well as the radiative centers are saturated.This publication has 16 references indexed in Scilit:
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