Incorporation scheme of H reducing defects in a-Si studied by NMR and ESR
- 31 March 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 117-118, 926-928
- https://doi.org/10.1016/0378-4363(83)90696-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Motional narrowing effects of F and H NMR in fluorinated and hydrogenated amorphous siliconSolid State Communications, 1982
- Determination of the relative number of monohydride and dihydride bonding sites in amorphous silicon-hydrogen alloys using pulsed NMR techniquesSolid State Communications, 1981
- ESR in Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1980
- Defects in plasma-deposited a-Si: HJournal of Non-Crystalline Solids, 1979