Annealing of point defects in quenched NiA1
- 1 March 1975
- journal article
- other
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 31 (3) , 739-742
- https://doi.org/10.1080/14786437508226554
Abstract
The annealing behaviour of quenched-in electrical resistivity” has been investigated in NiAl, completed by electron transmission microscopy. Isochronal treatments show one single recovery stage, explained as point-defect agglomeration to voids.Keywords
This publication has 6 references indexed in Scilit:
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