Tin-doped n + InP and GaInAs grown by atmospheric-pressure MOCVD
- 14 September 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (19) , 1315-1317
- https://doi.org/10.1049/el:19890880
Abstract
Heavily doped n+ InP and GaInAs epitaxial layers have been grown by metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure using tetraethyltin (TESn) as a dopant source. Sn-doped InP and GaInAs layers have been grown with doping levels as high as n300K -⋍ 3·3 × 1019cm−3 and n300K ⋍6·1 × 1019cm−3 respectively. Analysis of the Sn concentration in InP:Sn and GaInAs:Sn layers using secondary ion mass spectrometry (SIMS) shows that all of the Sn is ionised in InP and GaInAs. Hall measurements of Nd − Na at 300 and 77 K. indicate that the Sn is uncompensated up to these levels. SIMS analysis also shows that the use of TESn for the growth of n+ InP and GaInAs layers results in no severe memory effects and that abrupt Sn doping profiles can be achieved.Keywords
This publication has 1 reference indexed in Scilit:
- Ga1-xAlxAs-GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor DepositionPublished by Japan Society of Applied Physics ,1979