Novel GaAs metallised diode configurations to reduce skin-effect contributions at high frequencies
- 25 November 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (24) , 648-650
- https://doi.org/10.1049/el:19760498
Abstract
A highly reliable metallised GaAs Ta-Schottky-barrier diode with native-oxide passivation has been developed. The zero bias cutoff frequency of these diodes is greater than 1000 GHz when measured accurately near 60 GHz, with a zero-bias junction capacitance near 0·1 pF. This zero-bias cutoff frequency is approximately twice the value for a comparable nonmetallised device. The letter describes the r.f. properties and the structure of the device.Keywords
This publication has 1 reference indexed in Scilit:
- High-Q GaAs tuning varactorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1976