Carrier transport in double-heterostructure active layers
- 1 November 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (11) , 7235-7239
- https://doi.org/10.1063/1.331621
Abstract
Use of the diffusion equation (with an effective coefficient De) for describing carrier diffusion and drift parallel to the junction in the active layer of a semiconductor double-heterostructure is justified under commonly encountered conditions, and the effective De is evaluated. This equation is basic to the description of any laser or light emitting diode phenomenon where the injected carrier density is nonuniform. UFoffThis publication has 20 references indexed in Scilit:
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